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| PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet IXFN 64N50P VDSS ID25 RDS(on) trr = 500 V = 64 A 85 m 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Maximum Ratings 500 500 30 40 64 150 64 70 2.0 20 700 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C Features International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density D G = Gate S = Source D = Drain S miniBLOC, SOT-227 B (IXFN) E153432 S G Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Mounting torque 50/60 Hz t = 1 min IISOL 1 mA t=1s Mounting torque Terminal connection torque (M4) SOT-227B 1.13/10 Nm/lb.in. 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values Min. Typ. Max. 500 2.5 5.0 100 TJ = 125C 25 250 85 V V nA A A m Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99349(02/05) IXFN64N50P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 60 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 100 30 VGS = 10 V, VDS = 0.5 ID25 RG = 2 (External) 25 85 22 200 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 45 120 S pF pF pF ns ns ns ns nC nC nC 0.18 K/W SOT-227B 0.05 K/W SOT-227B Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 64 150 1.5 250 0.6 A A V ns C IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 |
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